smd type transistors 2SC4505 features high breakdown voltage. (b vceo = 400v) low saturation voltage, typically v ce (sat) = 0.05v at i c /i b = 10ma / 1ma. high switching speed, typically tf = 1.7s at ic =100ma. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 400 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 7v 0.1 a 0.2 a *1 0.5 w *2 2w junotion temperature t j 150 storage temperature t stg -55 to 150 *1 single pulse pw=20ms,duty=1/2 *2 when mounted on a 40x40x0.7 mm ceramic board. p c collectorpower dissipation collector current i c smd type transistors smd type smd type smd type product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage b vcbo i c =50a 400 v collector-emitter breakdown voltage b vceo i c =1ma 400 v emitter-base breakdown voltage b vebo i e =50a 7 v collector cutoff current i cbo v cb =400v 10 a emitter cutoff current i ebo v eb =6v 10 a collector-emitter saturation voltage v ce(sat) i c /i b =10ma/1ma 0.05 0.5 v base-emitter saturation voltage v be(sat) i c /i b =10ma/1ma 1.5 v dc current transfer ratio h fe v ce =10v , i c =10ma 82 270 transition frequency f t v ce =10v , i e =-10ma , f=10mhz 20 mhz output capacitance c ob v cb =10v , i e =0a , f=1mhz 7 pf turn-on time t on i c =-100ma r l =1.5k 1 s storage time t stg i b1 =-i b2 =10ma 5.5 s fall time t f v cc =-150v 1.7 s h fe classification type cep ceq rank p q marking 82to180 120to270 smd type transistors 2SC4505 smd type transistors smd type smd type smd type product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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